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| Field | Value |
| Title | Chemical treatment of photoluminescent porous silicon |
| Names |
VADJIKAR, RM
(author) JAIN, B (author) GUPTA, PK (author) NANDEDKAR, RV (author) BHAWALKAR, DD (author) PATNI, MJ (author) SRINIVASA, R (author) CHANDORKAR, AN (author) |
| Date Issued | 1994 (iso8601) |
| Abstract | Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible region. We report on the effect of chemical treatments such as hydrofluoric acid dip, ammonium fluoride solution treatment and boiling water treatment on the photoluminescence of porous silicon. In view of our results the mechanism of photoluminescence of porous silicon is discussed. |
| Genre | Letter |
| Topic | infrared-spectroscopy |
| Identifier | 0921-5107 |
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