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| Field | Value |
| Title | Microscopic properties of H-2 diluted HWCVD deposited a-SiC : H film |
| Names |
SWAIN, BP
(author) DUSANE, RO (author) |
| Date Issued | 2006 (iso8601) |
| Abstract | Hydrogenated amorphous silicon carbon (a-SiC:H) films were deposited by hot wire chemical vapor deposition. The evolution of microscopic properties like network bonding, disorder, density and chemical composition are studied as a function of H, dilution. The sp(2) and sp(3) carbon Clusters, hydrogen content and the density of the material has significant effect oil the dielectric properties like tile leakage current of M/a-SiC:H/< Si > MIS structures made with both Cu and Al metal electrode. A higher leakage current is observed in the case of Cu electrode. These changes are important for its applicability as a low dielectric constant barrier material in microelectronic devices, (c) 2005 Elsevier B.V. All rights reserved. |
| Genre | Article; Proceedings Paper |
| Topic | copper drift |
| Identifier | 0167-9317 |
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