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Title Study of optical properties of swift heavy ion irradiated gallium antimonide
 
Names DUBEY, SK (author)
DUBEY, RL (author)
YADAV, AD (author)
JADHAV V (author)
RAO, TKG (author)
MOHANTY, T (author)
KANJILAL, D (author)
Date Issued 2006 (iso8601)
Abstract Gallium antimonide (GaSb) which is a narrow band gap compound semiconductor has received attention because of its potential applications in optoelectronic devices. In the present work, p-type GaSb wafers of < 100 > orientation were irradiated with 70 MeV (56)Fe ions at fluences varying from 1 x 10(12) to 1 x 10(14) ions cm(-2). Mid-infrared and Far-infrared Fourier Transform (FT) measurements were carried out to investigate the optical properties of as irradiated and vacuum annealed samples. Mid-infrared Fourier Transform study revealed that the optical absorption of the irradiated samples increases with increasing ion fluence due to increase in irradiation-induced defects. The band gap energy determined from the infrared spectra was found to change from 0.65 to 0.62 eV while for non-irradiated GaSb wafer the corresponding estimate was 0.67 eV. The density of the carrier estimated from the plasma frequency (omega(p)) was found to vary from 2.05 x 10(18) to 1.9 x 10(18) cm(-3). The samples annealed in vacuum (10(-6) mb) over the temperature range 100-600 degrees C showed the significant damage recovery. Crown Copyright (c) 2005 Published by Elsevier B.V. All rights reserved.
Genre Article; Proceedings Paper
Topic gasb
Identifier 0168-583X
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