| Abstract |
Nanocrystalline silicon (nc-Si) films were deposited by hot-wire chemical vapour deposition (HWCVD) in the presence of varying H, concentrations and their structural and interfacial character investigated by X-ray diffraction, small-angle X-ray scattering (SAXS) and Raman spectroscopy. The crystalline fraction was around 30-50% and the nc-Si crystallite size was in the range 20-35 nm. The SAXS results were analysed by Guinier plot, scaling factor, and correlation distance. The nc-Si grains displayed a mass fractal appearance, and the interfacial inhomogeneity distance was similar to 2 nm. |
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