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Field | Value |
Title | Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs |
Names |
KUMAR, A
(author) MAHAPATRA, S (author) LAL, R (author) RAO, VR (author) |
Date Issued | 2001 (iso8601) |
Abstract | A multi-frequency transconductance technique for interface characterization of sub-micron SOI-MOSFETs is implemented. This technique is shown to be highly suitable for interface characterization in Sol devices where conventional charge-pumping techniques cannot be applied. Using this multi-frequency technique, sub-micron SOI-MNSFETs with a SiN dielectric deposited by a novel jet-vapor-deposition (JVD) process are characterized. Results are compared with charge pumping results obtained on bulk MNSFETs with identically processed JVD nitrides. (C) 2001 Elsevier Science Ltd. All rights reserved. |
Genre | Article; Proceedings Paper |
Identifier | 0026-2714 |
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