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Title Structural studies of silicon oxynitride layers formed by low energy ion implantation
 
Names CHAUHAN, AR (author)
YADAV, AD (author)
DUBEY, SK (author)
RAO, TKG (author)
Date Issued 2008 (iso8601)
Abstract Silicon oxynitride (Si(x)O(y)N(z)) layers were synthesized by implanting (16)O(2)(+) and (14)N(2)(+) 30 keV ions in 1:1 ratio with fluences ranging from 5 x 10(16) to 1 x 10(18) ions cm(-2) into single crystal silicon at room temperature. Rapid thermal annealing (RTA) of the samples was carried out at different temperatures in nitrogen ambient for 5 min. The FTIR studies show that the structures of ion-beam synthesized oxynitride layers are strongly dependent on total ion-fluence and annealing temperature. It is found that the structures formed at lower ion fluences (similar to 1 x 10(17) ions cm(-2)) are homogenous oxygen-rich silicon oxynitride. However, at higher fluence levels (similar to 1 x 10(18) ions cm(-2)) formation of homogenous nitrogen rich silicon oxynitride is observed due to ion-beam induced surface sputtering effects. The Micro-Raman studies on 1173 K annealed samples show formation of partially amorphous oxygen and nitrogen rich silicon oxynitride structures with crystalline silicon beneath it for lower and higher ion fluences, respectively. The Ellipsometry studies on 1173 K annealed samples show an increase in the thickness of silicon oxynitride layer with increasing ion fluence. The refractive index of the ion-beam synthesized layers is found to be in the range 1.54-1.96. (C) 2008 Elsevier B.V. All rights reserved.
Genre Article; Proceedings Paper
Topic nitrogen implantation
Identifier 0168-583X
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