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Semiconducting carbon films from a natural source: camphor

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Title Semiconducting carbon films from a natural source: camphor
 
Creator SHARON, M
SUNDARAKOTEESWARAN, N
KICHAMBARE, PD
KUMAR, M
ANDO, Y
ZHAO, XL
 
Subject tubules
camphor
carbon
pyrolysis
scanning electron microscopy
semiconductor
 
Description Thin films of carbon have been grown on alumina substrates by the pyrolysis of camphor at 900 degrees C for 2h in an argon atmosphere, followed by sintering for various time periods. The effect of sintering time on the surface morphology, conductivity, carrier concentration, mobility and bandgap of camphor-pyrolyzed films is discussed. Structural characterizations are performed on the basis of XRD and SEM analyses. Electrical conductivity measurements of these films, as a function of temperature, suggest them to be semiconductors. Hall-effect study of the as-grown films shows their carrier concentrations to be of the order of 10(17) cm(-3). The Hall mobilities of these films are found to vary from 1702 to 10263 cm(2) V-1 s(-1). The thermal bandgaps of these films are found to decrease with increasing sintering time. Thus, by controlled sintering of camphor-pyrolyzed carbon films, it is possible to obtain a semiconductor with the desired bandgap. Therefore, camphor-pyrolyzed semiconducting carbon films seem to be a promising material to develop a photovoltaic solar cell. (C) 1999 Elsevier Science S.A. All rights reserved.
 
Publisher ELSEVIER SCIENCE SA
 
Date 2011-10-21T22:17:43Z
2011-12-15T09:10:36Z
2011-10-21T22:17:43Z
2011-12-15T09:10:36Z
1999
 
Type Article; Proceedings Paper
 
Identifier DIAMOND AND RELATED MATERIALS,8,485-489
0925-9635
http://dx.doi.org/10.1016/S0925-9635(98)00289-1
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14752
http://hdl.handle.net/100/1540
 
Source 9th European Conference on Diamond, Diamond-like Materials, Nitrides and Silicon Carbide (Diamond 1998),IRAKLION, GREECE,SEP 13-18, 1998
 
Language English