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Systematic investigation of growth of InP nanowires by metalorganic vapor-phase epitaxy

DSpace at IIT Bombay

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Title Systematic investigation of growth of InP nanowires by metalorganic vapor-phase epitaxy
 
Creator BHUNIA, S
KAWAMURA, T
FUJIKAWA, S
WATANABE, Y
 
Subject integrated nanosystems
surface-diffusion
heterostructures
whiskers
arrays
laser
gaas
inp
nanowires
an nanoparticles
vls
movpe
 
Description The behavior of the vapor-liquid-solid growth of InP nanowires on (111)B oriented InP substrates by metalorganic vapor-phase epitaxial technique has been reported in details. The nanowires were grown using the colloidal An nanoparticles as the seed to control their diameter in the nanometer scale. The grown nanowires were found to be very uniform in cross section along their longitudinal axis, closely spaced and aligned vertically on the substrate surface. The growth behavior of the nanowires and the sensitive growth and anneal temperature dependence on the stability of the nanowires have been discussed in details. (C) 2004 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-10-22T03:16:09Z
2011-12-15T09:10:41Z
2011-10-22T03:16:09Z
2011-12-15T09:10:41Z
2004
 
Type Article; Proceedings Paper
 
Identifier PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,24,138-142
1386-9477
http://dx.doi.org/10.1016/j.physe.2004.04.003
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14806
http://hdl.handle.net/100/1596
 
Source International Symposium on Functional Semiconductor Nanostructures,Atsugi, JAPAN,NOV 12-14, 2003
 
Language English