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ULSI MOS transistors with jet vapour deposited (JVD) silicon nitride for the gate insulator

DSpace at IIT Bombay

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Title ULSI MOS transistors with jet vapour deposited (JVD) silicon nitride for the gate insulator
 
Creator MAHAPATRA, S
MANJULARANI, KN
RAO, VR
VASI, J
 
Subject carrier-induced interface
charge-pumping technique
 
Description As metal-oxide-semiconductor (MOS) transistors scale down, the thickness of the gate oxide must eventually scale to 1-2 nm. For such thin insulators, silicon dioxide poses problems of direct tunneling. This can be ameliorated by the use of jet vapour deposited (JVD) silicon nitride, which shows excellent electrical properties. This paper reviews the characteristics of JVD nitrides and MOS devices made with them. The paper also presents some new results obtained on 100 nm channel length MOS transistors using JVD nitrides, including the hot-carrier performance of such devices.
 
Publisher SPIE-INT SOC OPTICAL ENGINEERING
 
Date 2011-10-23T19:52:25Z
2011-12-15T09:10:49Z
2011-10-23T19:52:25Z
2011-12-15T09:10:49Z
2000
 
Type Proceedings Paper
 
Identifier PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II,3975,803-810
0-8194-3601-1
0277-786X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15221
http://hdl.handle.net/100/1675
 
Source 10th International Workshop on the Physics of Semiconductor Devices (IWPSD 99),NEW DELHI, INDIA,DEC 14-18, 1999
 
Language English