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A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping
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| Creator |
MAHAPATRA, S
RAO, VR PARIKH, CD VASI, J CHENG, B WOO, JCS |
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| Description |
Lateral Asymmetric Channel (LAC) MOSFETs with channel lengths down to 0.1 mu m have been fabricated and characterized for their electrical performance. Using charge pumping, we show, for the first time, channel V-T profiles obtained experimentally, demonstrating realization of asymmetric channel MOSFETs down to 0.1 mu m channel lengths. Our detailed experimental characterizations show improved performance for LAC MOSFETs over conventional MOSFETs, in addition to excellent hot-carrier reliability. Based on 2-D device simulation results, we attribute the improved hot-carrier reliability in LAC MOSFETs to the reduced peak lateral electric field in the channel.
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| Publisher |
ELSEVIER SCIENCE BV
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| Date |
2011-10-22T08:56:33Z
2011-12-15T09:10:50Z 2011-10-22T08:56:33Z 2011-12-15T09:10:50Z 1999 |
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| Type |
Article; Proceedings Paper
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| Identifier |
MICROELECTRONIC ENGINEERING,48,193-196
0167-9317 http://dx.doi.org/10.1016/S0167-9317(99)00369-X http://dspace.library.iitb.ac.in/xmlui/handle/10054/14859 http://hdl.handle.net/100/1691 |
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| Source |
11th Biennial Conference on Insulating Films on Semiconductors,KLOSTER BANZ, GERMANY,JUN 16-19, 1999
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| Language |
English
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