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Preparation and fundamental physical properties of the quaternary chalcogenides SnBi4-xTe3+ySe4-z and PbBi4-xTe3-ySe4-z

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Title Preparation and fundamental physical properties of the quaternary chalcogenides SnBi4-xTe3+ySe4-z and PbBi4-xTe3-ySe4-z
 
Creator KICHAMBARE, P
SHARON, M
SEKI, Y
HAGINO, T
NAGATA, S
 
Subject superconductivity
quaternary chalcogenides
electrical resistivity
diffuse reflectance spectra
x-ray diffraction
superconductivity
 
Description The quaternary chalcogenides SnBi4-xTe3+ySe4-z and PbBi4-xTe3-ySe4-z have been prepared and found to possess orthorhombic structure. The chemical composition of materials is confirmed by EDX. SnBi4-xTe3+ySe4-z and PbBi4-xTe3-ySe4-z exhibit a low resistivity 0.0055 ohm cm and 0.1665 ohm cm at room temperature and carrier concentration 7.15 x 10(18) and 1.97 x 10(16) cm(-3) respectively. The Hall measurements show n-type behaviour with mobility of carrier 87 and 2534 M-2/V, and band gap by diffuse reflectance are found to be 4.37 eV and 3.98 eV for SnBi4-xTe3+ySe4-z and PbBi4-xTe3-ySe4-z respectively.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-10-22T13:35:26Z
2011-12-15T09:10:51Z
2011-10-22T13:35:26Z
2011-12-15T09:10:51Z
1997
 
Type Article; Proceedings Paper
 
Identifier SOLID STATE IONICS,101,125-129
0167-2738
http://dx.doi.org/10.1016/S0167-2738(97)00227-0
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14908
http://hdl.handle.net/100/1706
 
Source XIIIth International Symposium on the Reactivity of Solids,HAMBURG, GERMANY,SEP 08-12, 1996
 
Language English