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A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETs

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Title A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETs
 
Creator KUMAR, A
LAL, R
RAO, VR
 
Subject frequency transconductance method
state density
interface states measurement
multi-frequency transconductance
lock-in-amplifier
jet vapor deposited nitride
mnsfets
hot-carrier damage
interface states generation
 
Description Conventional interface characterization techniques, such as charge pumping, cannot be applied to SOI devices due to lack of a substrate contact in these devices. A lock-in-amplifier based multi-frequency transconductance technique for interface characterization of sub-micron SOI MOSFETs has been implemented and used to study generation of interface states with stress. The technique has been validated on bulk MOSFETs using charge pumping measurements. Subsequently, it has been used to characterize hot carrier generated interface states in 100 nm SOI MNSFETs with silicon nitride gate dielectric deposited by the Jet-Vapor-Deposition process. Hot carrier stress studies on these MNSFETs show that the degradation is marginally lower in SOI MNSFETs as compared to identical bulk devices. This can be attributed to lower fields, and therefore impact generation, and absence of hot carriers caused by injection of carriers from the substrate. (C) 2001 Published by Elsevier Science B.V.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-10-22T11:01:02Z
2011-12-15T09:10:52Z
2011-10-22T11:01:02Z
2011-12-15T09:10:52Z
2001
 
Type Article; Proceedings Paper
 
Identifier MICROELECTRONIC ENGINEERING,59,429-433
0167-9317
http://dx.doi.org/10.1016/S0167-9317(01)00637-2
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14883
http://hdl.handle.net/100/1716
 
Source 12th Biennial Conference on Insulating Films on Semiconductors,UDINE, ITALY,JUN 20-23, 2001
 
Language English