A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETs
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
A simple and direct technique for interface characterization of SOI MOSFETs and its application in hot carrier degradation studies in sub-100 nm JVD MNSFETs
|
|
Creator |
KUMAR, A
LAL, R RAO, VR |
|
Subject |
frequency transconductance method
state density interface states measurement multi-frequency transconductance lock-in-amplifier jet vapor deposited nitride mnsfets hot-carrier damage interface states generation |
|
Description |
Conventional interface characterization techniques, such as charge pumping, cannot be applied to SOI devices due to lack of a substrate contact in these devices. A lock-in-amplifier based multi-frequency transconductance technique for interface characterization of sub-micron SOI MOSFETs has been implemented and used to study generation of interface states with stress. The technique has been validated on bulk MOSFETs using charge pumping measurements. Subsequently, it has been used to characterize hot carrier generated interface states in 100 nm SOI MNSFETs with silicon nitride gate dielectric deposited by the Jet-Vapor-Deposition process. Hot carrier stress studies on these MNSFETs show that the degradation is marginally lower in SOI MNSFETs as compared to identical bulk devices. This can be attributed to lower fields, and therefore impact generation, and absence of hot carriers caused by injection of carriers from the substrate. (C) 2001 Published by Elsevier Science B.V.
|
|
Publisher |
ELSEVIER SCIENCE BV
|
|
Date |
2011-10-22T11:01:02Z
2011-12-15T09:10:52Z 2011-10-22T11:01:02Z 2011-12-15T09:10:52Z 2001 |
|
Type |
Article; Proceedings Paper
|
|
Identifier |
MICROELECTRONIC ENGINEERING,59,429-433
0167-9317 http://dx.doi.org/10.1016/S0167-9317(01)00637-2 http://dspace.library.iitb.ac.in/xmlui/handle/10054/14883 http://hdl.handle.net/100/1716 |
|
Source |
12th Biennial Conference on Insulating Films on Semiconductors,UDINE, ITALY,JUN 20-23, 2001
|
|
Language |
English
|
|