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27.1GHz CMOS distributed voltage controlled oscillators with body bias for frequency tuning of 1.28GHz

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Title 27.1GHz CMOS distributed voltage controlled oscillators with body bias for frequency tuning of 1.28GHz
 
Creator BHATTACHARYYA, K
MUKHERJEE, J
BAGHINI, MS
 
Description The feasibility of using standard 0.18 mu m CMOS technology for low cost wideband monolithic microwave integrated circuits (MMICs) at similar to 27GHz is demonstrated. Three monolithically integrated distributed voltage controlled oscillators (DVCOs) with a novel gain cell comprising of n-FET common source with p-FET current-source load are designed. Two of the DVCO's have 3 stages of the gain cell while the third has 4 stages. Top Layer metal is used a coplanar wave guide for producing on-chip inductive elements. An important feature of these DVCOs is the use of body bias variation for very large frequency tuning. Simulation results indicate that the 4-stage DVCO achieves a tuning range of 22.43-23.42GHz i.e 990MHz whereas the 3-stage DVCO has a tuning range of 25.82-27.10GHz i.e 1.28GHz, with respectively similar to 0.5dBm and similar to 1dBm change in output power over tuning range for DVCOs. The best value of phase noise for 3-stage DVCO is obtained by applying reverse body bias on n-FETs. For a reverse body bias voltage of -IV, the phase noise is -97.39dBc/Hz at 1MHz offset from 26.87GHz.
 
Publisher IEEE
 
Date 2011-10-25T01:10:04Z
2011-12-15T09:10:54Z
2011-10-25T01:10:04Z
2011-12-15T09:10:54Z
2009
 
Type Proceedings Paper
 
Identifier 2009 52ND IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1 AND 2,1034-1038
978-1-4244-4479-3
1548-3746
http://dx.doi.org/10.1109/MWSCAS.2009.5235978
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15564
http://hdl.handle.net/100/1731
 
Source 52nd IEEE International Midwest Symposium on Circuits and Systems,Cancun, MEXICO,AUG 02-05, 2009
 
Language English