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High-energy ion implantation of iron in silicon

DSpace at IIT Bombay

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Title High-energy ion implantation of iron in silicon
 
Creator BHOLE, KG
KAMALAPURKAR, BA
DUBEY, SK
YADAV, AD
RAO, TKG
MOHANTI, T
KANJILAL, D
 
Subject irradiated silicon
high-energy implantation
iron
silicon
ftir
low temperature esr
 
Description Seventy MeV, Fe-56(5+) ion implantation into p-type silicon with different doses varying from 1 x 10(12) to 5 x 10(14) ions cm(-2) has been investigated by Fourier transform infrared (FT/IR) reflectivity and low temperature (298-133 K) ESR measurements. The FT/IR reflectivity studies showed the presence of interference fringes in high dose (>1 x 10(13) ions cm(-2)) implanted samples indicating the formation of ion induced damaged layers. The depth of the damaged layer from the silicon surface estimated from fringe shifts was found to be about 16 mum comparable to the project range of 56 Fe ions in silicon at 70 MeV. The ESR studies show the presence of Pa and Pb centers with g values 2.0063 and 2.0015, respectively, at room temperature. In addition to these, other defects observed at g values 2.0071 and 1.9947 are due to complex defects produced by high-energy ion implantation. (C) 2003 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-10-22T22:22:12Z
2011-12-15T09:10:55Z
2011-10-22T22:22:12Z
2011-12-15T09:10:55Z
2003
 
Type Article; Proceedings Paper
 
Identifier NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,212,525-529
0168-583X
http://dx.doi.org/10.1016/S0168-583X(03)01749-X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14991
http://hdl.handle.net/100/1735
 
Source 20th International Conference on Atomic Collisions in Solids,PURI, INDIA,JAN 19-24, 2003
 
Language English