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Reduction of the anomalous VT behavior in MOSFETs with high-kappa/metal gate stacks

DSpace at IIT Bombay

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Title Reduction of the anomalous VT behavior in MOSFETs with high-kappa/metal gate stacks
 
Creator FERAIN, I
PANTISANO, L
KOTTANTHARAYIL, A
PETRY, J
TROJMAN, L
COLLAERT, N
JURCZAK, M
DE MEYER, K
 
Subject hafnium silicon oxynitride
threshold voltage
nitridation
 
Description This study investigates the impact of different nitridation processes on hafnium silicon oxynitride (HfSiON) dielectrics. It is demonstrated that the threshold voltage (V-T vs. L-g) behavior at short gate lengths is strongly impacted by the nitridation process, depending on the Hf/(Hf+Si) ratio and the HfSiON thickness. A Plasma nitridation in oxidizing ambient results in a modification of the dielectric that can explain the anomalous V-T behavior in devices integrated with hafnium-based dielectrics and metal gate. Reduction in anomalous V-T behavior and limited gate leakage is achieved by applying a thermal nitridation in a NH3 ambient on Hf-rich silicon oxynitride.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-10-22T12:35:39Z
2011-12-15T09:10:55Z
2011-10-22T12:35:39Z
2011-12-15T09:10:55Z
2007
 
Type Article; Proceedings Paper
 
Identifier MICROELECTRONIC ENGINEERING,84,1882-1885
0167-9317
http://dx.doi.org/10.1016/j.mee.2007.04.074
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14898
http://hdl.handle.net/100/1736
 
Source 15th Biennial Conference on Insulating Films on Semiconductors,Glyfada Athens, GREECE,JUN 20-23, 2007
 
Language English