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Low temperature hot-wire CVD nitrides for deep sub-micron CMOS technologies

DSpace at IIT Bombay

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Title Low temperature hot-wire CVD nitrides for deep sub-micron CMOS technologies
 
Creator PATIL, SB
VAIDYA, S
KUMBHAR, A
DUSANE, RO
CHANDORKAR, AN
RAO, VR
 
Subject chemical-vapor-deposition
films
 
Description In this work we report results on MNS capacitors with the silicon nitride films fabricated by using a novel Hot-Wire CVD technique. The dependence of deposition parameters on the film properties is looked into. Our electrical characterisation results on MNS capacitors show good oxide breakdown fields, and low leakage.
 
Publisher SPIE-INT SOC OPTICAL ENGINEERING
 
Date 2011-10-23T20:10:17Z
2011-12-15T09:10:56Z
2011-10-23T20:10:17Z
2011-12-15T09:10:56Z
2000
 
Type Proceedings Paper
 
Identifier PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II,3975,879-882
0-8194-3601-1
0277-786X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15223
http://hdl.handle.net/100/1747
 
Source 10th International Workshop on the Physics of Semiconductor Devices (IWPSD 99),NEW DELHI, INDIA,DEC 14-18, 1999
 
Language English