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Improved electrical-properties of Silicon dioxide films for MOS gate dielectrics grown in an inductively coupled RF plasma

DSpace at IIT Bombay

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Field Value
 
Title Improved electrical-properties of Silicon dioxide films for MOS gate dielectrics grown in an inductively coupled RF plasma
 
Creator CHOKSI, AJ
LAL, R
CHANDORKAR, AN
 
Subject anodization
oxidation
 
Description The effects of growth conditions on properties of silicon dioxide grown in oxygen/argon plasma are described. An inductively coupled r.f. plasma anodization system was designed in which various experimental parameters could be varied and monitored. Its design is described first and then we examine the effects of some experimental conditions on the electrical properties of MOS capacitors fabricated with the plasma oxides. A qualitative model of the growth mechanism of SiO2 in oxygen plasma has been described. The data obtained in this investigation in addition to our work reported earlier on dependence of electrical properties on the anodization current density and the gas pressure in the plasma, is helpful in optimizing the growth conditions to produce device grade oxide films.
 
Publisher ELSEVIER SCIENCE SA LAUSANNE
 
Date 2011-10-22T22:48:37Z
2011-12-15T09:10:56Z
2011-10-22T22:48:37Z
2011-12-15T09:10:56Z
1992
 
Type Article; Proceedings Paper
 
Identifier THIN SOLID FILMS,220,50-54
0040-6090
http://dx.doi.org/10.1016/0040-6090(92)90547-O
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14996
http://hdl.handle.net/100/1751
 
Source 19TH INTERNATIONAL CONF ON METALLURGICAL COATINGS AND THIN FILMS,SAN DIEGO, CA,APR 06-10, 1992
 
Language English