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Study of sputtered Molybdenum Nitride as a diffusion barrier

DSpace at IIT Bombay

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Title Study of sputtered Molybdenum Nitride as a diffusion barrier
 
Creator ANITHA, VP
BHATTACHARYA, A
PATIL, NG
MAJOR, S
 
Subject scale integration applications
general-aspects
layers
performance
films
 
Description Molybdenum nitride thin films were deposited using reactive r.f. magnetron sputtering. Single phase gamma-Mo2N films having f.c.c. structure and exhibiting metallic conductivity have been obtained over a wide range of nitrogen partial pressures. The temperature dependence of resistivity studied in the range 30-300 K showed a negative temperature coefficient of resistivity for all the films. The activation energy was found to be temperature dependent, indicating that conduction in these films is dominated by carrier hopping through localized states in the intergranular region. SEM studies on Al/Mo2N/Si structures revealed the resistance of these films to Al-Si interdiffusion. Without any post-deposition annealing treatment, Mo2N/Si were found to be perfectly ohmic, with a specific contact resistivity similar to-2.6 x 10(3) Omega mu m(2). These characteristics point towards the potential use of this compound as diffusion barrier in Si-based microelectronic devices.
 
Publisher ELSEVIER SCIENCE SA LAUSANNE
 
Date 2011-10-23T01:12:03Z
2011-12-15T09:10:58Z
2011-10-23T01:12:03Z
2011-12-15T09:10:58Z
1993
 
Type Article; Proceedings Paper
 
Identifier THIN SOLID FILMS,236,306-310
0040-6090
http://dx.doi.org/10.1016/0040-6090(93)90687-K
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15013
http://hdl.handle.net/100/1770
 
Source 20th International Conference on Metallurgical Coatings and Thin Films,SAN DIEGO, CA,APR 19-23, 1993
 
Language English