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Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics

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Title Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics
 
Creator RAO, VR
HANSCH, W
BAUMGARTNER, H
EISELE, I
SHARMA, DK
VASI, J
GRABOLLA, T
 
Subject charge trapping
gate dielectrics
 
Description In this study we compared the charge trapping characteristics of low pressure chemical vapour deposited (LPCVD) oxide and remote plasma enhanced chemical vapour deposited (RPECVD) oxide with two types of thermally grown oxide, namely high-pressure grown oxide (HIPOX) and the standard thermal dry oxide. The deposited oxides show enhanced Fowler-Nordheim tunnelling currents compared with the thermal oxides. Our results an charge trapping characteristics under high-field stressing and irradiation show that the deposited oxides exhibit very large electron trapping compared with the grown oxides and that these electron traps in the deposited oxides reside close to the Si-SiO2 interface and hence can affect the device reliability. (C) 1997 Elsevier Science S.A.
 
Publisher ELSEVIER SCIENCE SA LAUSANNE
 
Date 2011-10-23T02:23:58Z
2011-12-15T09:10:59Z
2011-10-23T02:23:58Z
2011-12-15T09:10:59Z
1997
 
Type Article; Proceedings Paper
 
Identifier THIN SOLID FILMS,296,37-40
0040-6090
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15022
http://hdl.handle.net/100/1779
 
Source Symposium B: Thin Film Materials for Large Area Electronics at the European-Materials-Research-Society 1996 Spring Meeting,STRASBOURG, FRANCE,JUN 04-07, 1996
 
Language English