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DC electrical conductivity of chemical vapour deposited diamond sheets: a correlation with hydrogen content and paramagnetic defects

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Title DC electrical conductivity of chemical vapour deposited diamond sheets: a correlation with hydrogen content and paramagnetic defects
 
Creator SIKDER, AK
JACOB, AP
SHARDA, T
MISRA, DS
PANDEY, M
KABIRAJ, D
AVASTHI, DK
 
Subject polycrystalline diamond
thin-films
resonance
cvd
resistivity
silicon
methane
flame
diamond
chemical vapour deposition
electron paramagnetic resonance
electrical conductivity
 
Description Diamond sheets were grown on p-type Si(100) substrates varying the deposition pressure from 20 to 140 Torr at 1163 K by a hot filament chemical vapour deposition (HFCVD) process. A mixture of 0.8% methane in balance hydrogen was used as a precursor gas. Diamond sheets deposited at low pressures are translucent with very low concentration of hydrogen and non-diamond impurities, The amount of non-diamond impurities and the hydrogen content increase in the sheets significantly with the growth pressure. A systematic variation in the value of the room temperature DC electrical conductivity (sigma(300)) of diamond sheets was observed. Highly pure sheets show very high values of sigma(300). It is suggested that the paramagnetic defects intrinsic to CVD diamond might be one of the controlling parameters of sigma(300) Of the sheets. (C) 1998 Elsevier Science S.A. All rights reserved.
 
Publisher ELSEVIER SCIENCE SA
 
Date 2011-10-23T03:30:47Z
2011-12-15T09:11:00Z
2011-10-23T03:30:47Z
2011-12-15T09:11:00Z
1998
 
Type Article; Proceedings Paper
 
Identifier THIN SOLID FILMS,332,98-102
0040-6090
http://dx.doi.org/10.1016/S0040-6090(98)01205-X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15032
http://hdl.handle.net/100/1786
 
Source 25th International Conference on Metallurgical Coatings and Thin Films,SAN DIEGO, CALIFORNIA,APR 25-MAY 01, 1998
 
Language English