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AMPS-1D simulation studies of electronic transport in n(+)-mu c-Si : H thin films

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Title AMPS-1D simulation studies of electronic transport in n(+)-mu c-Si : H thin films
 
Creator TRIPATHI, S
DUSANE, RO
 
Subject microcrystalline silicon
carrier transport
model
amorphous semiconductors
silicon
solar cells
thin film transistors
photovoltaics
conductivity
microcrystallinity
 
Description To study the electronic transport in highly n-doped microcrystalline silicon (n(+)-mu c-Si:H) thin films, grain-boundary trapping model is implemented in AMPS (analysis of microelectronic and photonic structure)-1D. This approach is based on the traditional thermionic-emission model and considering the electronic transport parallel to the substrate. In spite of its simplicity, the model leads to the simulated values of activation energy, free carrier concentration, interface trap charge density and mobility which are in good agreement with the referred Hall effect measurement results for electron cyclotron resonance-chemical vapor deposited (ECR-CVD) highly n-doped mu c-Si:H thin films. (c) 2006 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-10-23T04:27:15Z
2011-12-15T09:11:00Z
2011-10-23T04:27:15Z
2011-12-15T09:11:00Z
2006
 
Type Article; Proceedings Paper
 
Identifier JOURNAL OF NON-CRYSTALLINE SOLIDS,352,1105-1108
0022-3093
http://dx.doi.org/10.1016/j.jnoncrysol.2005.11.132
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15038
http://hdl.handle.net/100/1791
 
Source 21st International Conference on Amorphous and Nanocrystalline Semiconductors,Lisbon, PORTUGAL,SEP 04-09, 2005
 
Language English