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Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy

DSpace at IIT Bombay

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Title Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy
 
Creator BHUNIA, S
KAWAMURA, T
FUJIKAWA, S
NAKASHIMA, H
FURUKAWA, K
TORIMITSU, K
WATANABE, Y
 
Subject heterostructures
gaas
inp
nanowires
au catalyst
movpe
sem
tem
 
Description In this study, a detailed investigation of the growth of vertically oriented and surface mounted InP nanowires has been carried out. They were grown by metal organic vapor phase epitaxy on semi-insulating B-oriented InP wafers using An nanoparticle-assisted vapor-liquid-solid growth technique. The proper conditions for the stable nanowire growth were obtained by systematic variation of the pre-growth annealing and the growth temperatures and were found to be 540 and 440 degreesC, respectively. The variation in the length of the nanowires was also studied as a function of time. Transmission electron diffraction studies carried out on the single nanowires revealed the growth direction with the presence of rotational twin structures, the axis of rotation being the growth direction. Analysis of the high-resolution transmission electron microscopic images shows that the orientation and kinks on the nanowires were controlled by the distribution of these twin structures. (C) 2004 Elsevier B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE SA
 
Date 2011-10-23T07:08:27Z
2011-12-15T09:11:02Z
2011-10-23T07:08:27Z
2011-12-15T09:11:02Z
2004
 
Type Article; Proceedings Paper
 
Identifier THIN SOLID FILMS,464,244-247
0040-6090
http://dx.doi.org/10.1016/j.tsf.2004.06.101
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15065
http://hdl.handle.net/100/1816
 
Source 7th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures,Nara, JAPAN,NOV 16-20, 2003
 
Language English