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Gas phase chemistry study during deposition of a-Si : H and mu c-Si : H films by HWCVD using quadrupole mass spectrometry

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Title Gas phase chemistry study during deposition of a-Si : H and mu c-Si : H films by HWCVD using quadrupole mass spectrometry
 
Creator PATIL, SB
KUMBHAR, AA
DUSANE, RO
 
Subject hydrogenated amorphous-silicon
chemical-vapor-deposition
hot-wire deposition
glow-discharge
identification
decomposition
spectroscopy
filament
silane
 
Description Amorphous and microcrystalline silicon films were deposited by HWCVD under different deposition conditions and the gas phase chemistry was studied by in situ Quadrupole Mass Spectrometry. Attempt is made to correlate the properties of the films with the gas phase chemistry during deposition. Interestingly, unlike in PECVD, partial pressure of H-2 is higher than any other species during deposition of a-Si:H as well as muc-Si:H. Effect of hydrogen dilution on film properties and on concentration of various chemical species in the gas phase is studied. For low hydrogen dilution [H-2]/[SiH4] from 0 to 1 (where [SiH4] is 10 seem), all films deposited are amorphous with photoconductivity gain of similar to 10(6). During deposition of these amorphous films SiH2 was dominant in gas phase next to [H-2]. Interestingly [Si]/[SiH2] ratio increases from 0.4 to 0.5 as dilution increased from 0 to 1, and further to more than 1 for higher hydrogen dilution leading to [Si] dominance. At hydrogen dilution ratio 20, consequently films deposited were microcrystalline.
 
Publisher MATERIALS RESEARCH SOCIETY
 
Date 2011-10-23T09:42:31Z
2011-12-15T09:11:05Z
2011-10-23T09:42:31Z
2011-12-15T09:11:05Z
2002
 
Type Proceedings Paper
 
Identifier AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002,715,171-178
1-55899-651-6
0272-9172
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15092
http://hdl.handle.net/100/1840
 
Source Symposium on Amorphous and Heterogeneous Silicon-Based Films held at the 2002 MRS Spring Meeting,SAN FRANCISCO, CA,APR 02-05, 2002
 
Language English