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Degradation study of ultra-thin JVD silicon nitride MNSFETs

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Title Degradation study of ultra-thin JVD silicon nitride MNSFETs
 
Creator MANJULARANI, KN
RAO, VR
VASI, J
 
Subject oxide traps
damage
 
Description In this paper we discuss a new method for measuring border trap density (N-bt) in sub-micron transistors using the hysteresis in the drain current. We have used this method to measure N-bt in Jet Vapour Deposited (JVD) Silicon Nitride transistors (MNSFETs). We have extended this method to measure the energy and spatial distribution of border traps in these devices. The transient drain current varies linearly with logarthmic time. This suggests that tunneling is the dominant charge exchange mechanism of border traps. The pre-stress energy distribution is uniform whereas post-stress energy distribution shows a peak near the midgap.
 
Publisher MATERIALS RESEARCH SOCIETY
 
Date 2011-10-23T09:51:58Z
2011-12-15T09:11:05Z
2011-10-23T09:51:58Z
2011-12-15T09:11:05Z
2002
 
Type Proceedings Paper
 
Identifier SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY,716,209-214
1-55899-652-4
0272-9172
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15094
http://hdl.handle.net/100/1842
 
Source Symposium on Silicon Materials held at the 2002 MRS Spring Meeting,SAN FRANCISCO, CA,APR 01-05, 2002
 
Language English