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Suppression of parasitic BJT action in single pocket thin film deep sub-micron SOI MOSFETs.

DSpace at IIT Bombay

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Title Suppression of parasitic BJT action in single pocket thin film deep sub-micron SOI MOSFETs.
 
Creator DIN, N
AATISH, K
DUNGA, MV
RAO, VR
VASI, J
 
Subject cmos
 
Description A study of parasitic bipolar junction transistor effects in single pocket thin film silicon-on-insulators (SOI) nMOSFETs has been carried out. Characterization and simulation results show that parasitic bipolar junction transistor action is reduced in single pocket SOI MOSFETs in comparison to homogeneously doped conventional SOI MOSFETs. A novel Gate-Induced-Drain-Leakage (GIDL) current technique was used to characterize the SOI MOSFETs. 2 - D simulations were carried out to analyze the reduced parasitic bipolar junction effect in single pocket thin film SOI MOSFETs.
 
Publisher MATERIALS RESEARCH SOCIETY
 
Date 2011-10-23T10:08:56Z
2011-12-15T09:11:05Z
2011-10-23T10:08:56Z
2011-12-15T09:11:05Z
2002
 
Type Proceedings Paper
 
Identifier SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY,716,3-8
1-55899-652-4
0272-9172
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15097
http://hdl.handle.net/100/1846
 
Source Symposium on Silicon Materials held at the 2002 MRS Spring Meeting,SAN FRANCISCO, CA,APR 01-05, 2002
 
Language English