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Improvement in gate dielectric quality of ultra thin a : SiN : H MNS capacitor by hydrogen etching of the substrate

DSpace at IIT Bombay

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Title Improvement in gate dielectric quality of ultra thin a : SiN : H MNS capacitor by hydrogen etching of the substrate
 
Creator WAGHMARE, PC
PATIL, SB
DUSANE, RO
RAO, VR
 
Description To extend the scaling limit of thermal SiO2, in the ultra thin regime when the direct tunneling current becomes significant, members of our group embarked on a program to explore the potential of silicon nitride as an alternative gate dielectric. Silicon nitride can be deposited using several CVD methods and its properties significantly depend on the method of deposition. Although these CVD methods can give good physical properties, the electrical properties of devices made with CVD silicon nitride show very poor performance related to very poor interface, poor stability, presence of large quantity of bulk traps and high gate leakage current. We have employed the rather newly developed Hot Wire Chemical Vapor Deposition (HWCVD) technique to develop the a:SiN:H material. From the results of large number of optimization experiments we propose the atomic hydrogen of the substrate surface prior to deposition to improve the quality of gate dielectric. Our preliminary results of these efforts show a five times improvement in the fixed charges and interface state density.
 
Publisher MATERIALS RESEARCH SOCIETY
 
Date 2011-10-23T10:15:03Z
2011-12-15T09:11:05Z
2011-10-23T10:15:03Z
2011-12-15T09:11:05Z
2002
 
Type Proceedings Paper
 
Identifier SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY,716,171-176
1-55899-652-4
0272-9172
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15098
http://hdl.handle.net/100/1847
 
Source Symposium on Silicon Materials held at the 2002 MRS Spring Meeting,SAN FRANCISCO, CA,APR 01-05, 2002
 
Language English