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Polarity dependence of degradation in ultra thin oxide and JVD nitride gate dielectrics

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Title Polarity dependence of degradation in ultra thin oxide and JVD nitride gate dielectrics
 
Creator MUTHA, Y
MANJULARANI, KN
LAL, R
RAO, VR
 
Subject interface
 
Description We have studied high field degradation of Jet Vapor Deposited (JVD) silicon nitride MNSFETs with DC stress fields and compared their degradation with conventional silicon dioxide MOSFETs under identical stress conditions. We have observed that in both oxide and nitride devices, the interface degradation is higher for negative gate field. Further, the relative degradation of nitrides is always lower compared to that of oxides for both positive and negative stress conditions. AC stress experiments were performed on these ultra thin oxide transistors to understand possible degradation processes. The frequency, the peak-to-peak and offset voltage of the applied AC signal are some of the parameters that have been varied. Detailed characterization results and an analysis of the degradation mechanisms are presented in this paper. We conclude that many of the degradation results can be explained using the trapped hole recombination model.
 
Publisher MATERIALS RESEARCH SOCIETY
 
Date 2011-10-23T10:25:53Z
2011-12-15T09:11:06Z
2011-10-23T10:25:53Z
2011-12-15T09:11:06Z
2002
 
Type Proceedings Paper
 
Identifier SILICON MATERIALS-PROCESSING, CHARACTERIZATION AND RELIABILITY,716,369-374
1-55899-652-4
0272-9172
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15100
http://hdl.handle.net/100/1851
 
Source Symposium on Silicon Materials held at the 2002 MRS Spring Meeting,SAN FRANCISCO, CA,APR 01-05, 2002
 
Language English