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Processing and switching behavior of multiferroic (Bi(0.7)Dy(0.3)FeO(3)) microstructure arrays

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Title Processing and switching behavior of multiferroic (Bi(0.7)Dy(0.3)FeO(3)) microstructure arrays
 
Creator MANDAL, M
PRASHANTHI, K
PALURI, S
PINTO, R
DUTTAGUPTA, SP
PALKAR, VR
 
Subject multiferroic
ferroelectric memories
microstructure
 
Description Multiferroic systems, which exhibit coexistence of both ferroelectric and ferromagnetic ordering at room temperature, are of great importance for a variety of device applications. Due to coupling between the two order parameters, it is possible to bring polarization in the multiferroic systems by either means (applying electric or magnetic field). We have been successful in developing material (Bi(0.3)Dy(0.3)FeO(3)) which exhibits the multiferroic behavior at room temperature with significant coupling in bulk as well as thin films. We therefore propose to develop a procedure to fabricate multiple memory devices using this new compound.
 
Publisher AMER INST PHYSICS
 
Date 2011-10-23T12:07:05Z
2011-12-15T09:11:09Z
2011-10-23T12:07:05Z
2011-12-15T09:11:09Z
2010
 
Type Proceedings Paper
 
Identifier INTERNATIONAL CONFERENCE ON ADVANCED NANOMATERIALS AND NANOTECHNOLOGY (ICANN 2009),1276,340-343
978-0-7354-0825-8
0094-243X
http://dx.doi.org/10.1063/1.3504323
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15125
http://hdl.handle.net/100/1880
 
Source 1st International Conference on Advanced Nanomaterials and Nanotechnology,Guwahati, INDIA,DEC 09-11, 2009
 
Language English