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Characterization and simulation of lateral asymmetric channel silicon-on-insulator MOSFETs
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Characterization and simulation of lateral asymmetric channel silicon-on-insulator MOSFETs
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| Creator |
NAJEEB-UD-DIN
RAO, VR VASI, J |
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| Subject |
cmos
soi |
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| Description |
This paper presents the characterization and simulation results of Lateral Asymmetric Channel (LAC) doped Silicon-on-Insulator (SOI) MOSFETs. The results are compared with uniformly doped SOI MOSFETs. It is shown that these LAC devices have better characteristics with many advantages.
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| Publisher |
SPIE-INT SOC OPTICAL ENGINEERING
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| Date |
2011-10-23T22:01:43Z
2011-12-15T09:11:11Z 2011-10-23T22:01:43Z 2011-12-15T09:11:11Z 2002 |
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| Type |
Proceedings Paper
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| Identifier |
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,644-648
0-8194-4500-2 0277-786X http://dspace.library.iitb.ac.in/xmlui/handle/10054/15249 http://hdl.handle.net/100/1904 |
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| Source |
11th International Workshop on the Physics of Semiconductor Devices,New Delhi, INDIA,DEC 11-15, 2001
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| Language |
English
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