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Reliability issues of ultra thin silicon nitride (a-SiN : H) by hot wire CVD for deep sub-micron CMOS technologies

DSpace at IIT Bombay

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Title Reliability issues of ultra thin silicon nitride (a-SiN : H) by hot wire CVD for deep sub-micron CMOS technologies
 
Creator WAGHMARE, PC
PATIL, SB
KUMBHAR, A
DUSANE, RO
RAO, VR
 
Description The reliability of gate dielectric is of high importance, especially as its thickness is reaching atomic dimensions. The gate leakage currents and the operating fields can be very high in devices with these ultra thin gate dielectrics. Several anomalous degradation mechanisms and breakdown characteristics are observed in these devices. New phenomena such as quasi breakdown and SILC are now considered important for accurate reliability assessment In this work we investigate a systematic reliability evaluation of high quality MNS devices made with ultra thin HWCVD nitride as the gate dielectric by taking into account these newer effects.
 
Publisher SPIE-INT SOC OPTICAL ENGINEERING
 
Date 2011-10-23T22:20:05Z
2011-12-15T09:11:12Z
2011-10-23T22:20:05Z
2011-12-15T09:11:12Z
2002
 
Type Proceedings Paper
 
Identifier PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,1418-1420
0-8194-4500-2
0277-786X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15252
http://hdl.handle.net/100/1920
 
Source 11th International Workshop on the Physics of Semiconductor Devices,New Delhi, INDIA,DEC 11-15, 2001
 
Language English