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Growth and study of high-k Ta2O5 films deposited by Ta sputtering followed by its thermal oxidation
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Growth and study of high-k Ta2O5 films deposited by Ta sputtering followed by its thermal oxidation
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| Creator |
KRISHNAMOORTHI, P
CHANDORKAR, AN |
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| Description |
For large-scale integration of devices, due to the problems associated with very thin layers of SiO2, a high-k dielectric becomes a necessity. In this work, Ta2O5 as a high-k dielectric in MOS device is studied. The deposition of Tantalum Pentoxide was carried out by thermal oxidation of sputtered Ta. Ta2O5 was directly deposited on silicon, without any buffer layer and its physical and electrical characteristics have been reported.
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| Publisher |
SPIE-INT SOC OPTICAL ENGINEERING
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| Date |
2011-10-23T22:23:23Z
2011-12-15T09:11:13Z 2011-10-23T22:23:23Z 2011-12-15T09:11:13Z 2002 |
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| Type |
Proceedings Paper
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| Identifier |
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,1307-1309
0-8194-4500-2 0277-786X http://dspace.library.iitb.ac.in/xmlui/handle/10054/15253 http://hdl.handle.net/100/1925 |
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| Source |
11th International Workshop on the Physics of Semiconductor Devices,New Delhi, INDIA,DEC 11-15, 2001
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| Language |
English
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