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Optimization of sub 100 nm gamma-gate Si-MOSFETs for RF applications

DSpace at IIT Bombay

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Title Optimization of sub 100 nm gamma-gate Si-MOSFETs for RF applications
 
Creator GUPTA, M
VIDYA, V
RAO, VR
TO, KH
WOO, JCS
 
Description This paper presents characterization and simulation studies on the RF performance of the Gamma (Gamma) gate MOSFETs. The Gamma-gate MOSFET offers the advantage of reduced gate resistance, a critical parameter in high frequency circuits. The aim of this study is to identify the optimum Gamma-gate extension length from the gate and drain resistance point of view in aggressively scaled CMOS.
 
Publisher SPIE-INT SOC OPTICAL ENGINEERING
 
Date 2011-10-23T22:30:54Z
2011-12-15T09:11:13Z
2011-10-23T22:30:54Z
2011-12-15T09:11:13Z
2002
 
Type Proceedings Paper
 
Identifier PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,652-656
0-8194-4500-2
0277-786X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15254
http://hdl.handle.net/100/1930
 
Source 11th International Workshop on the Physics of Semiconductor Devices,New Delhi, INDIA,DEC 11-15, 2001
 
Language English