Optimization of sub 100 nm gamma-gate Si-MOSFETs for RF applications
DSpace at IIT Bombay
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Title |
Optimization of sub 100 nm gamma-gate Si-MOSFETs for RF applications
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Creator |
GUPTA, M
VIDYA, V RAO, VR TO, KH WOO, JCS |
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Description |
This paper presents characterization and simulation studies on the RF performance of the Gamma (Gamma) gate MOSFETs. The Gamma-gate MOSFET offers the advantage of reduced gate resistance, a critical parameter in high frequency circuits. The aim of this study is to identify the optimum Gamma-gate extension length from the gate and drain resistance point of view in aggressively scaled CMOS.
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Publisher |
SPIE-INT SOC OPTICAL ENGINEERING
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Date |
2011-10-23T22:30:54Z
2011-12-15T09:11:13Z 2011-10-23T22:30:54Z 2011-12-15T09:11:13Z 2002 |
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Type |
Proceedings Paper
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Identifier |
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,652-656
0-8194-4500-2 0277-786X http://dspace.library.iitb.ac.in/xmlui/handle/10054/15254 http://hdl.handle.net/100/1930 |
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Source |
11th International Workshop on the Physics of Semiconductor Devices,New Delhi, INDIA,DEC 11-15, 2001
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Language |
English
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