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A new technique to profile hot-carrier induced interface state generation in nMOSFETs using charge pumping

DSpace at IIT Bombay

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Title A new technique to profile hot-carrier induced interface state generation in nMOSFETs using charge pumping
 
Creator MAHAPATRA, S
PARIKH, CD
VASI, J
 
Description new charge pumping technique to obtain the spatial profile of hot-carrier induced interface-state density N-it (cm(-2)) near the drain junction is proposed. It is shown that the pre-stress interface-state density is nonuniform near the junction. contrary to the assumption of constant density in earlier methods. The charge pumping edge and hence the damage distribution is uniquely obtained which does not require backup simulation and is free from the assumption of spatial uniformity of pre-stress interface-state density. Experimental procedure and data analysis is discussed in detail.
 
Publisher SPIE-INT SOC OPTICAL ENGINEERING
 
Date 2011-10-23T16:34:47Z
2011-12-15T09:11:14Z
2011-10-23T16:34:47Z
2011-12-15T09:11:14Z
1998
 
Type Proceedings Paper
 
Identifier PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2,3316,1030-1033
0-8194-2756-X
0277-786X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15177
http://hdl.handle.net/100/1940
 
Source IX International Workshop on the Physics of Semiconductor Devices (IWPSD),DELHI, INDIA,DEC 16-20, 1997
 
Language English