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A new quasi-static model for short-channel MOSFETs
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
A new quasi-static model for short-channel MOSFETs
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| Creator |
DAMLE, P
PARIKH, CD |
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| Description |
A new analytical quasi-static model is derived for the short-channel MOSFET which comprehensively accounts for the effect of the lateral field-dependence of the channel mobility. New charge equations are derived based on this formulation, and compared with those derived from the conventional approach. Interestingly, it is found that the difference between the two models is at most 3model is theoretically more sound.
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| Publisher |
SPIE-INT SOC OPTICAL ENGINEERING
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| Date |
2011-10-23T16:47:02Z
2011-12-15T09:11:14Z 2011-10-23T16:47:02Z 2011-12-15T09:11:14Z 1998 |
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| Type |
Proceedings Paper
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| Identifier |
PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2,3316,996-999
0-8194-2756-X 0277-786X http://dspace.library.iitb.ac.in/xmlui/handle/10054/15179 http://hdl.handle.net/100/1942 |
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| Source |
IX International Workshop on the Physics of Semiconductor Devices (IWPSD),DELHI, INDIA,DEC 16-20, 1997
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| Language |
English
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