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Radiation-induced degradation of bipolar transistors

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Title Radiation-induced degradation of bipolar transistors
 
Creator TOPKAR, A
MATHEW, T
LAL, R
VASI, J
NANVER, L
 
Description The radiation-induced degradation of high frequency npn bipolar transistors with low stress LPCVD silicon nitride as the surface isolation is investigated for the first time. The results are compared with those for devices with silicon dioxide as the isolation. The total dose degradation of the devices is observed to be a reduction in the current gain I-C/I-B because of increase in the base current I-B and no change in the collector current I-C. Devices with lower perimeter-to-area ratio are observed to be more rad-hard compared to devices with higher perimeter-to-area ratio. The degradation of both type of devices is found to be qualitatively similar, but the degradation is more severe for devices with nitride as the surface isolation. The results presented in this paper indicate that radiation-induced degradation of bipolar transistors is primarily because of damage to the surface isolation layer over the emitter-base junction region due to irradiation. The larger degradation of bipolar devices with nitride as surface isolation compared to devices with oxide as isolation suggests the presence of more traps in the nitride layer.
 
Publisher SPIE-INT SOC OPTICAL ENGINEERING
 
Date 2011-10-23T16:59:17Z
2011-12-15T09:11:14Z
2011-10-23T16:59:17Z
2011-12-15T09:11:14Z
1998
 
Type Proceedings Paper
 
Identifier PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2,3316,686-689
0-8194-2756-X
0277-786X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15181
http://hdl.handle.net/100/1944
 
Source IX International Workshop on the Physics of Semiconductor Devices (IWPSD),DELHI, INDIA,DEC 16-20, 1997
 
Language English