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Analytical design methodology of a novel drift-layer for super-junction power MOSFET: CoolMOS (TM)

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Title Analytical design methodology of a novel drift-layer for super-junction power MOSFET: CoolMOS (TM)
 
Creator KONDEKAR, PN
PATIL, MB
PARIKH, CD
 
Description Here a simple methodology for design of the drift layer using Super-Junction Theory is developed. Analytically designed drift layer is used to simulate the CoolMOS and it is verified for the design parameters and terminal characteristics. Simulation result shows that this methodology does give a first order design method. The On resistance and Break down voltage conflict at high voltage drift layer is also discussed along with possible solution. The limitations of the SJ-Theory for implementation in CoolMOS, are also discussed.
 
Publisher SPIE-INT SOC OPTICAL ENGINEERING
 
Date 2011-10-23T22:46:28Z
2011-12-15T09:11:16Z
2011-10-23T22:46:28Z
2011-12-15T09:11:16Z
2002
 
Type Proceedings Paper
 
Identifier PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,1304-1306
0-8194-4500-2
0277-786X
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15257
http://hdl.handle.net/100/1961
 
Source 11th International Workshop on the Physics of Semiconductor Devices,New Delhi, INDIA,DEC 11-15, 2001
 
Language English