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Breakdown voltage and on resistance of super-junction power MOSFET : CoolMOS (TM)
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Breakdown voltage and on resistance of super-junction power MOSFET : CoolMOS (TM)
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| Creator |
KONDEKAR, PN
PATIL, MB PARIKH, CD |
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| Description |
In this paper the concept of the new technology power MOSFETs called CoolMOS((TM)) is analyzed based on Superjunction Theory. The conventional Power MOSFET drift layer is designed first and simulated for comparing with SJ-layer technology. The results of simulation are helpful in explaining, how this new technology has overcome the limitation for high voltage power MOSFETs by breaking the Silicon Limit.
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| Publisher |
SPIE-INT SOC OPTICAL ENGINEERING
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| Date |
2011-10-23T22:51:11Z
2011-12-15T09:11:16Z 2011-10-23T22:51:11Z 2011-12-15T09:11:16Z 2002 |
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| Type |
Proceedings Paper
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| Identifier |
PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2,4746,440-443
0-8194-4500-2 0277-786X http://dspace.library.iitb.ac.in/xmlui/handle/10054/15258 http://hdl.handle.net/100/1966 |
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| Source |
11th International Workshop on the Physics of Semiconductor Devices,New Delhi, INDIA,DEC 11-15, 2001
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| Language |
English
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