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Analog device and circuit performance degradation under substrate bias enhanced hot carrier stress

DSpace at IIT Bombay

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Title Analog device and circuit performance degradation under substrate bias enhanced hot carrier stress
 
Creator NARASIMHULU, K
RAO, VR
 
Subject submicron cmos technology
design
analog performance degradation
substrate enhanced hci
forward body biasing (fbb) scheme
auger recombination
v(t) mismatch
 
Description In this paper, we investigate the influence of forward and reverse body bias stress on the hot carrier induced degradation of MOS analog performance parameters. The underlying physical mechanisms are identified with the help of experimental results, TCAD and Monte-Carlo simulations. We show that under for-ward body bias stress conditions, the auger recombination enhanced hot carrier injection (HCI) degrades the device and circuit performance considerably. Degradation in various analog circuits' performance is quantified by considering the individual transistors under different stress conditions.
 
Publisher IEEE
 
Date 2011-10-25T02:06:14Z
2011-12-15T09:11:20Z
2011-10-25T02:06:14Z
2011-12-15T09:11:20Z
2006
 
Type Proceedings Paper
 
Identifier 2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL,465-470
0-7803-9498-4
http://dx.doi.org/10.1109/RELPHY.2006.251263
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15575
http://hdl.handle.net/100/2007
 
Source 44th Annual IEEE International Reliability Physics Symposium,San Jose, CA,MAR 26-30, 2006
 
Language English