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Interface-trap driven NBTI for ultrathin (EOT similar to 12A) plasma and thermal nitrided oxynitrides
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Interface-trap driven NBTI for ultrathin (EOT similar to 12A) plasma and thermal nitrided oxynitrides
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| Creator |
GUPTA, G
MAHAPATRA, S MADHAV, LL VARGHESE, D AHMED, K NOURI, F |
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| Description |
Negative Bias Temperature Instability (NBTI) is studied in ultrathin Si oxynitride (SiON) films made by thermal (TNO) and plasma (PNO) processes. Threshold voltage degradation (Delta V(T)) and recovery during and after NBTI stress are explained by generation and recovery of interface traps (Delta N(IT)).
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| Publisher |
IEEE
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| Date |
2011-10-25T02:21:16Z
2011-12-15T09:11:21Z 2011-10-25T02:21:16Z 2011-12-15T09:11:21Z 2006 |
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| Type |
Proceedings Paper
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| Identifier |
2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL,731-732
0-7803-9498-4 http://dx.doi.org/10.1109/RELPHY.2006.251347 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15577 http://hdl.handle.net/100/2016 |
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| Source |
44th Annual IEEE International Reliability Physics Symposium,San Jose, CA,MAR 26-30, 2006
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| Language |
English
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