Structural and electrical properties of rectifying p-ZnO/n(+)-InP heterojunction
DSpace at IIT Bombay
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Title |
Structural and electrical properties of rectifying p-ZnO/n(+)-InP heterojunction
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Creator |
MANDAL, A
CHAKRABARTI, S |
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Subject |
zno thin-films
molecular-beam epitaxy strain ii-vi wide band gap material xrd lattice strain uv/vis spectroscopy xps hall measurement activation energy current rectification ratio |
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Description |
ZnO thin films were deposited over n(+) InP (100) substrates by Pulsed Laser Deposition (PLD) technique at 400 degrees C temperature in an oxygen ambient of 75 mTorr followed by Rapid Thermal Annealing (RTA) at the temperatures 450 C, 550 degrees C and 650 degrees C respectively. XRD results revealed that the full width at half maxima (FWHM) of the annealed samples were narrower (0.1836) compared to that of the as grown sample (0.3264) for the c-axis oriented ZnO (002) films. A lower strain (similar to-0.23%) and less biaxial compressive stress (similar to-1.063 GPa) were observed for the annealed samples. AFM images depicted lowest surface roughness of 7.257 nm (root-mean-square) for the film annealed at 550 degrees C. A high absorption coefficient of 28.12 mu m(-1) was calculated around 380 nm wavelength from the UV/VIS spectroscopy in reflection mode for the as-grown sample. The optical band gap was calculated to be about 3.23 eV. p-type ZnO film, grown under same condition (annealed at 550 degrees C) over semi insulating InP (100) substrates had a high hole concentration of 2.95X10(19) cm(-3) and Hall mobility of 8.63 cm(2)/V-s at room temperature. Current Rectification Ratio (I(F)/I(R))(|V|=1.5) of 17.2 was measured from the I-V characteristics of the p-ZnO/n(+)-InP heterojunction diode fabricated with the ZnO film annealed at 550 degrees C.
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Publisher |
SPIE-INT SOC OPTICAL ENGINEERING
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Date |
2011-10-24T04:49:55Z
2011-12-15T09:11:29Z 2011-10-24T04:49:55Z 2011-12-15T09:11:29Z 2010 |
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Type |
Proceedings Paper
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Identifier |
OXIDE-BASED MATERIALS AND DEVICES,7603,
978-0-8194-7999-0 0277-786X http://dx.doi.org/10.1117/12.840525 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15330 http://hdl.handle.net/100/2094 |
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Source |
Conference on Oxide-based Materials and Devices,San Francisco, CA,JAN 24-27, 2010
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Language |
English
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