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A detailed temperature dependent Hall study of As-doped ZnO thin films

DSpace at IIT Bombay

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Title A detailed temperature dependent Hall study of As-doped ZnO thin films
 
Creator NAGAR, S
CHAKRABARTI, S
 
Subject pulsed-laser deposition
fabrication
zno
pulsed laser deposition
rapid thermal annealing
x-ray diffraction
van der pauw hall
 
Description Successful p-type ZnO thin films have been grown on semi-insulating < 100 > GaAs by Pulsed Laser Deposition Technique followed by Rapid Thermal Annealing (RTA) of the samples. X-ray Diffraction (XRD) results confirmed deposition of < 002 > ZnO verifying its highly c-axis oriented growth. The results also showed that the annealed samples were much more crystalline than the as-grown ones. Atomic Force Microscopy (AFM) results verified uniform deposition of the thin film providing a roughness value as low as 8.5 nm. The stability of the p-type ZnO thin films over a temperature range of 80K to 320K was analyzed by taking temperature dependent Van der Pauw Hall measurements of the samples. The highest calculated values of hole concentration and Hall mobility at 320K were found to be 9.26x10(19) cm(-3) and 32.4 cm(2)/V-sec respectively. These promising results would help in fabrication of ZnO based optoelectronics devices like LED's, LASER, photodiodes etc.
 
Publisher SPIE-INT SOC OPTICAL ENGINEERING
 
Date 2011-10-24T04:53:14Z
2011-12-15T09:11:29Z
2011-10-24T04:53:14Z
2011-12-15T09:11:29Z
2010
 
Type Proceedings Paper
 
Identifier OXIDE-BASED MATERIALS AND DEVICES,7603,
978-0-8194-7999-0
0277-786X
http://dx.doi.org/10.1117/12.842013
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15331
http://hdl.handle.net/100/2095
 
Source Conference on Oxide-based Materials and Devices,San Francisco, CA,JAN 24-27, 2010
 
Language English