Stranski-Krastanow mode grown multilayer In(Ga)As/GaAs Quantum dot heterostructures on Germanium : a step towards integrating III-V photonics on Silicon
DSpace at IIT Bombay
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Title |
Stranski-Krastanow mode grown multilayer In(Ga)As/GaAs Quantum dot heterostructures on Germanium : a step towards integrating III-V photonics on Silicon
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Creator |
BANERJEE, S
HALDER, N CHAKRABARTI, S |
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Subject |
molecular-beam epitaxy
migration-enhanced epitaxy quality gaas growth optical-properties ge substrate solar-cells minority mbe iii-v/si integration molecular beam epitaxy migration enhanced epitaxy germanium substrate in(ga)as quantum dots afm xtem photoluminescence measurements |
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Description |
We have addressed MBE growth of multilayer In(Ga)As/GaAs QDs by depositing a migration enhanced epitaxy (MEE) grown GaAs layer in between the GaAs/Ge interface. The low temperature (350 degrees C) MEE grown layer is used to complement the GaAs/Ge heterointerface which typically suffers from anti-phase domain disorder due to the polar/nonpolar epitaxy and interdiffusion across the interface. High quality of GaAs growth front on Ge substrate for the subsequent growth of QDs is further ensured by overgrowing the MEE GaAs layer with a thin GaAs layer grown at very slow growth rate (0.1 mu m/hr) at 475 degrees C followed by a thick GaAs at a fast growth rate (1 mu m/hr) at 590 degrees C. AFM, XTEM and PL measurements were done on the MBE grown samples to investigate the morphological and optical properties of the grown QDs. The AFM shows growth of dense QDs. XTEM image shows the heterostructure is free from structural defects. The 25K PL emission peak is at 1060 nm, which is almost similar to the control In(Ga) As/GaAs QD sample grown on GaAs substrate but the observed PL intensity was found lower compared to control sample. This might be due to nonradiative centers created in the barrier layer due to strain in the sample.
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Publisher |
SPIE-INT SOC OPTICAL ENGINEERING
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Date |
2011-10-24T04:57:58Z
2011-12-15T09:11:29Z 2011-10-24T04:57:58Z 2011-12-15T09:11:29Z 2010 |
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Type |
Proceedings Paper
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Identifier |
SILICON PHOTONICS V,7606,
978-0-8194-8002-6 0277-786X http://dx.doi.org/10.1117/12.841579 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15332 http://hdl.handle.net/100/2096 |
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Source |
Conference on Silicon Photonics V,San Francisco, CA,JAN 24-27, 2010
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Language |
English
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