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Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies

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Title Ultra-thin silicon nitride by hot wire chemical vapor deposition (HWCVD) for deep sub-micron CMOS technologies
 
Creator WAGHMARE, PC
PATIL, SB
KUMBHAR, A
DUSANE, RO
RAO, VR
 
Subject low-temperature silicon nitride (si3n4)
high-k dielectric
hwcvd
 
Description Silicon nitride is considered a promising candidate to replace thermal oxide dielectrics, as the latter is reaching its scaling limits due to the excessive increase in the gate tunneling leakage current. The novel hot wire chemical vapor deposition (HWCVD) technique shows promise for gate quality silicon nitride film yields at 250 degreesC while maintaining their primary advantage of a higher dielectric constant of 7.1. In this paper we report the results of our efforts towards developing ultra-thin HWCVD silicon nitride as an advanced gate dielectric for the replacement of thermal gate oxides in future generations of ultra large scale integration (ULSI) devices. (C) 2002 Elsevier Science B.V. All rights reserved.
 
Publisher ELSEVIER SCIENCE BV
 
Date 2011-10-24T08:24:52Z
2011-12-15T09:11:32Z
2011-10-24T08:24:52Z
2011-12-15T09:11:32Z
2002
 
Type Article; Proceedings Paper
 
Identifier MICROELECTRONIC ENGINEERING,61-2,625-629
0167-9317
http://dx.doi.org/10.1016/S0167-9317(02)00575-0
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15363
http://hdl.handle.net/100/2130
 
Source 27th International Conference on Micro- and Nano-Engineering,GRENOBLE, SPAIN,SEP 16-19, 2001
 
Language English