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Parameter extraction for advanced MOSFET model using particle swarm optimization

DSpace at IIT Bombay

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Title Parameter extraction for advanced MOSFET model using particle swarm optimization
 
Creator THAKKER, RA
PATIL, MB
ANIL, KG
 
Subject mosfet parameter extraction
particle swarm optimization
genetic algorithm
 
Description In this paper, parameter extraction for PSP MOSFET model is demonstrated using Particle Swarm Optimization (PSO) algorithm. I-V measurements are taken on 65 nm technology NMOS devices. For the purpose of comparison, parameter extraction is also carried out using Genetic Algorithm (GA). It is shown that PSO algorithm gives better agreement between measurements and model in comparison to GA and with less computational effort. A novel "memory loss (ML)" operation is introduced in the PSO algorithm for the first time, which further improves algorithm efficiency. The PSO algorithm with ML operation has taken 81 minutes on average to extract parameters of two devices of channel lengths, 70 nm and 1 mu m.
 
Publisher CRC PRESS-TAYLOR & FRANCIS GROUP
 
Date 2011-10-26T03:03:05Z
2011-12-15T09:11:34Z
2011-10-26T03:03:05Z
2011-12-15T09:11:34Z
2008
 
Type Proceedings Paper
 
Identifier NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION,845-848
978-1-4200-8505-1
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15890
http://hdl.handle.net/100/2144
 
Source Nanotechnology Conference and Trade Show (Nanotech 2008),Boston, MA,JUN 01-05, 2008
 
Language English