Parameter extraction for advanced MOSFET model using particle swarm optimization
DSpace at IIT Bombay
View Archive InfoField | Value | |
Title |
Parameter extraction for advanced MOSFET model using particle swarm optimization
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Creator |
THAKKER, RA
PATIL, MB ANIL, KG |
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Subject |
mosfet parameter extraction
particle swarm optimization genetic algorithm |
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Description |
In this paper, parameter extraction for PSP MOSFET model is demonstrated using Particle Swarm Optimization (PSO) algorithm. I-V measurements are taken on 65 nm technology NMOS devices. For the purpose of comparison, parameter extraction is also carried out using Genetic Algorithm (GA). It is shown that PSO algorithm gives better agreement between measurements and model in comparison to GA and with less computational effort. A novel "memory loss (ML)" operation is introduced in the PSO algorithm for the first time, which further improves algorithm efficiency. The PSO algorithm with ML operation has taken 81 minutes on average to extract parameters of two devices of channel lengths, 70 nm and 1 mu m.
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Publisher |
CRC PRESS-TAYLOR & FRANCIS GROUP
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Date |
2011-10-26T03:03:05Z
2011-12-15T09:11:34Z 2011-10-26T03:03:05Z 2011-12-15T09:11:34Z 2008 |
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Type |
Proceedings Paper
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Identifier |
NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS: MICROSYSTEMS, PHOTONICS, SENSORS, FLUIDICS, MODELING, AND SIMULATION,845-848
978-1-4200-8505-1 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15890 http://hdl.handle.net/100/2144 |
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Source |
Nanotechnology Conference and Trade Show (Nanotech 2008),Boston, MA,JUN 01-05, 2008
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Language |
English
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