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Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) technique
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) technique
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| Creator |
KUMAR, EN
MAHETA, VD PURAWAT, S ISLAM, AE OLSEN, C AHMED, K ALAM, MA MAHAPATRA, S |
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| Description |
An Ultra-Fast On-The-Fly (UF-OTF) I(DLIN) technique having 1 mu s resolution is developed and used to study gate insulator process dependence of NBTI in Silicon Oxynitride (SiON) p-MOSFETs. The Nitrogen density at the Si-SiON interface and the thickness of SiON layer are shown to impact temperature, time, and field dependencies of NBTI. The plausible material dependence of NBTI physical mechanism is explored.
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| Publisher |
IEEE
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| Date |
2011-10-24T18:33:28Z
2011-12-15T09:11:42Z 2011-10-24T18:33:28Z 2011-12-15T09:11:42Z 2007 |
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| Type |
Proceedings Paper
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| Identifier |
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2,809-812
978-1-4244-1507-6 http://dx.doi.org/10.1109/IEDM.2007.4419071 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15493 http://hdl.handle.net/100/2236 |
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| Source |
IEEE International Electron Devices Meeting,Washington, DC,DEC 10-12, 2007
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| Language |
English
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