Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation
DSpace at IIT Bombay
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Title |
Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation
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Creator |
NAINANI, A
PALIT, S SINGH, PK GANGULY, U KRISHNA, N VASI, J MAHAPATRA, S |
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Description |
A 3D simulator for metal Nanocrystal (NC) flash is developed and verified with published experimental data. The simulator is capable of extracting physical parameters and predicting their impact on cell performance. The simulator is used to optimize cell design and analyze performance with scaling, NC randomness and NC number fluctuations.
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Publisher |
IEEE
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Date |
2011-10-24T18:43:50Z
2011-12-15T09:11:42Z 2011-10-24T18:43:50Z 2011-12-15T09:11:42Z 2007 |
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Type |
Proceedings Paper
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Identifier |
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2,947-950
978-1-4244-1507-6 http://dx.doi.org/10.1109/IEDM.2007.4419109 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15494 http://hdl.handle.net/100/2237 |
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Source |
IEEE International Electron Devices Meeting,Washington, DC,DEC 10-12, 2007
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Language |
English
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