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Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation

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Field Value
 
Title Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation
 
Creator NAINANI, A
PALIT, S
SINGH, PK
GANGULY, U
KRISHNA, N
VASI, J
MAHAPATRA, S
 
Description A 3D simulator for metal Nanocrystal (NC) flash is developed and verified with published experimental data. The simulator is capable of extracting physical parameters and predicting their impact on cell performance. The simulator is used to optimize cell design and analyze performance with scaling, NC randomness and NC number fluctuations.
 
Publisher IEEE
 
Date 2011-10-24T18:43:50Z
2011-12-15T09:11:42Z
2011-10-24T18:43:50Z
2011-12-15T09:11:42Z
2007
 
Type Proceedings Paper
 
Identifier 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2,947-950
978-1-4244-1507-6
http://dx.doi.org/10.1109/IEDM.2007.4419109
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15494
http://hdl.handle.net/100/2237
 
Source IEEE International Electron Devices Meeting,Washington, DC,DEC 10-12, 2007
 
Language English