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Extensive reliability analysis of Tungsten dot NC devices embedded in HfAlO high-k dielectric under NAND (FN/FN) operation
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Extensive reliability analysis of Tungsten dot NC devices embedded in HfAlO high-k dielectric under NAND (FN/FN) operation
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| Creator |
SINGH, PK
NAINANI, A |
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| Subject |
metal nanocrystal memories
fabrication |
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| Description |
In this work we present an extensive reliability and performance evaluation of Tungsten dot Nanocrystal (NC) devices under NAND mode of operation. Improvement in performance and reliability was observed with scaling W and L. The use of better high-k processing is proposed to improve the reliability. We also propose a numerical simulation model for NC memory devices using transient capacitive charging model. The approach is very generic and computationally less extensive than the previous works.
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| Publisher |
IEEE
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| Date |
2011-10-26T03:47:26Z
2011-12-15T09:11:47Z 2011-10-26T03:47:26Z 2011-12-15T09:11:47Z 2007 |
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| Type |
Proceedings Paper
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| Identifier |
IPFA 2007: PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS,197-201
978-1-4244-1014-9 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15900 http://hdl.handle.net/100/2292 |
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| Source |
14th International Symposium on the Physical and Failure Analysis of Integrated Circuits,Bangalore, INDIA,JUL 11-13, 2007
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| Language |
English
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