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On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?

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Title On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?
 
Creator MAHAPATRA, S
AHMED, K
VARGHESE, D
ISLAM, AE
GUPTA, G
MADHAV, L
SAHA, D
ALAM, MA
 
Subject bias temperature instability
thin-films
degradation
impact
model
nbti
plasma and thermal nitridation
interface traps
hole trapping
reaction-diffusion model
 
Description Negative Bias Temperature Instability (NBTI) is studied in plasma (PNO) and thermal (TNO) Si-oxynitride devices having varying EOT. Threshold voltage shift (Delta V(T)) and its field (E(OX)), temperature (T) and time (t) dependencies obtained from no-delay on-the-fly linear drain current (I(DLIN)) measurements are carefully compared to that obtained from Charge Pumping (CP). It is shown that thin and thick PNO and thin TNO devices show very similar NBTI behavior, which can primarily be attributed to generation of interface traps (Delta N(IT)). Thicker TNO devices show different NBTI behavior, and can be attributed to additional contribution from hole trapping (Delta N(h)) in pre-existing bulk traps. A physics based model is developed to explain the experimental results.
 
Publisher IEEE
 
Date 2011-10-24T21:12:42Z
2011-12-15T09:11:48Z
2011-10-24T21:12:42Z
2011-12-15T09:11:48Z
2007
 
Type Proceedings Paper
 
Identifier 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL,1-9
978-1-4244-0918-1
http://dx.doi.org/10.1109/IPDPS.2007.370658
http://dspace.library.iitb.ac.in/xmlui/handle/10054/15522
http://hdl.handle.net/100/2295
 
Source 45th Annual IEEE International Reliability Physics Symposium,Phoenix, AZ,APR 15-19, 2007
 
Language English