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A new physical insight and 3D device modeling of sti type denmos device failure under ESD conditions
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
A new physical insight and 3D device modeling of sti type denmos device failure under ESD conditions
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| Creator |
SHRIVASTAVA, M
SCHNEIDER, J BAGHINI, MS GOSSNER, H RAO, VR |
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| Description |
We present experimental and simulation studies of STI type DeNMOS devices under ESD conditions. The impact of base-push-out, power dissipation because of space charge build-up and, regenerative NPN action, on the various phases of filamentation and the final thermal runaway is discussed. A modification of the device layout is proposed to achieve an improvement (similar to 2X) infailure threshold (I(T2)).
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| Publisher |
IEEE
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| Date |
2011-10-24T22:19:31Z
2011-12-15T09:11:49Z 2011-10-24T22:19:31Z 2011-12-15T09:11:49Z 2009 |
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| Type |
Proceedings Paper
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| Identifier |
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2,669-675
978-1-4244-2888-5 http://dx.doi.org/10.1109/IRPS.2009.5173327 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15532 http://hdl.handle.net/100/2304 |
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| Source |
47th Annual IEEE International Reliability Physics Symposium,Montreal, CANADA,APR 26-30, 2009
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| Language |
English
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