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Highly resistive body STI Ndemos : an optimized demos device to achieve moving current filaments for robust ESD protection
DSpace at IIT Bombay
View Archive Info| Field | Value | |
| Title |
Highly resistive body STI Ndemos : an optimized demos device to achieve moving current filaments for robust ESD protection
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| Creator |
SHRIVASTAVA, M
SCHNEIDER, J BAGHINI, MS GOSSNER, H RAO, VR |
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| Description |
A novel DeMOS device with modified body and source region in grounded gate (gg) NMOS configuration for ESD protection is proposed. Detailed 3D simulations indicate a high failure threshold because of moving current filaments and self-protection from gate oxide breakdown, even for fast transients. A detailed physics of second basepushout and moving filaments is discussed
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| Publisher |
IEEE
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| Date |
2011-10-24T22:27:02Z
2011-12-15T09:11:49Z 2011-10-24T22:27:02Z 2011-12-15T09:11:49Z 2009 |
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| Type |
Proceedings Paper
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| Identifier |
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2,754-759
978-1-4244-2888-5 http://dx.doi.org/10.1109/IRPS.2009.5173344 http://dspace.library.iitb.ac.in/xmlui/handle/10054/15533 http://hdl.handle.net/100/2305 |
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| Source |
47th Annual IEEE International Reliability Physics Symposium,Montreal, CANADA,APR 26-30, 2009
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| Language |
English
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